Impact 4 - a General Two - Dimensional Multilayer Process Simulator
نویسندگان
چکیده
A new two-dimensional multilayer process simulator based on finite element method has been developed to accuratly study advanced silicon technologies. The basic processing steps simulation are presented and numerical problems arising from the multilayer structures are outlined. Finally, the capabilities of the program are demonstrated with the simulation of a self-aligned polysilicon bipolar transistor.
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تاریخ انتشار 2007